InP-based membrane photodetectors for optical interconnects to Si

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2007, Pages 34-36

  Binetti, P R A ^a   Leijtens, X J M ^a   Nikoufard, M ^a   De Vries, T ^a   Oei, Y S ^a   Di Cioccio, L ^b   Fedeli, J M ^b   Lagahe, C ^c   Orobtchouk, R ^d   Seassal, C ^d   Van Campenhout, J ^e   Van Thourhout, D ^e   Van Veldhoven, P J ^a   Notzel R ^a   Smit, M K ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b CEA LETI   (France)

^c TRACIT Technologies   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

InGaAs InP; Optical interconnects; Photodetector; PICMOS

Indexed keywords

FUTURE GENERATIONS; INGAAS/INP; INP; PHOTONIC CIRCUITS; PHOTONIC DEVICE FABRICATION; PICMOS; RESPONSIVITY; SOI WAFERS; WAFER-SCALE PROCESSING; WAVEGUIDE LOSS;

INTEGRATED OPTICS; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONIC DEVICES; PHOTONICS; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649663991     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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