Origin of ferromagnetism via hole doping in SnO2: First-principles calculation

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 30, 2009, Pages 2592-2595

  Zhang, Chang wen ^a   Kao, Hong ^b   Dong, Jian min ^c  

^a UNIVERSITY OF JINAN   (China)

^b NORTH CHINA INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

^c SHANDONG UNIVERSITY   (China)

Author keywords

Ferromagnetic semiconductor; First principles calculation

Indexed keywords

FERROMAGNETIC MATERIALS; FERROMAGNETISM; GROUND STATE; MAGNETIC SEMICONDUCTORS; OXYGEN; SEMICONDUCTOR DOPING;

FERROMAGNETIC GROUND STATE; FERROMAGNETIC SEMICONDUCTOR; FIRST-PRINCIPLES CALCULATION; HALF-METALLIC FERROMAGNETS; HIGH SPIN STATE; LOCAL-MOMENT FORMATION; MAGNETIC INTERACTIONS; STRONG LOCALIZATIONS;

CALCULATIONS;

EID: 67649506222     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.05.013     Document Type: Article

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