Simulation of charge collection processes in semiconductor CdZnTe γ-ray detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 606, Issue 3, 2009, Pages 508-516

  Benoit, Mathieu ^a   Hamel, L A ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

ray detection; Charge transport; Monte Carlo simulation; Semiconductors

Indexed keywords

CHARGE COLLECTION; CHARGE TRANSPORT; DETECTOR SIMULATIONS; DIFFUSION COEFFICIENTS; ELECTRICAL PROPERTY; ELECTROSTATIC REPULSION; EXPERIMENTAL SETUP; GAUSSIAN; INTERACTION PROCESS; MEASURED DATA; MONTE CARLO ALGORITHMS; MONTE CARLO SIMULATION; SEMICONDUCTORS; STRIP DETECTORS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRIC PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTOR DETECTORS; SHAPED CHARGES; TRANSPORT PROPERTIES;

SIMULATORS;

EID: 67649429368     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.04.019     Document Type: Article

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