The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2

Intermetallics

Volumn 17, Issue 11, 2009, Pages 920-926

  Chen, Y C ^a   Xu, J ^b   Fan, X H ^c   Zhang, X F ^a   Han, L ^a   Lin, D Y ^d   Li, Q H ^d   Uher, C ^e  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (China)

^b INSTITUTE OF METAL RESEARCH   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^d Shandong RealForce Energy Co Ltd   (China)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A. Composites, based on the intermetallics matrix; A. Nanostructured intermetallics; B. Diffusion; D. Microstructure; G. Thermoelectric power generation

Indexed keywords

A. COMPOSITES, BASED ON THE INTERMETALLICS MATRIX; A. NANOSTRUCTURED INTERMETALLICS; B. DIFFUSION; D. MICROSTRUCTURE; G. THERMOELECTRIC POWER GENERATION;

DIFFUSION; INTERMETALLICS; PHASE INTERFACES; SILICON; SILICON COMPOUNDS; TERNARY SYSTEMS; THERMOELECTRIC POWER;

PERIODIC STRUCTURES;

EID: 67649395497     PISSN: 09669795     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.intermet.2009.04.002     Document Type: Article

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