Dependence of the properties of hydrothermally grown ZnO on precursor concentration

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 8, 2009, Pages 1423-1426

  Zhao, Xiuqin ^a   Lee, Jae Yeop ^a   Kim, Cho Rong ^a   Heo, Joohoe ^a   Shin, Chang Mi ^a   Leem, Jae Young ^a   Ryu, Hyukhyun ^a   Chang, Ji Ho ^b   Lee, Hong Chan ^b   Jung, Woo Gwang ^c   Son, Chang Sik ^d   Shin, Byoung Chul ^e   Lee, Won Jae ^e   Tan, Swee Tiam ^f   Zhao, Junliang ^g   Sun, Xiaowei ^f,g  

^a Inje University   (South Korea)

^b Korea Maritime University   (South Korea)

^c Kookmin University   (South Korea)

^d Silla University   (South Korea)

^e Dong Eui University   (South Korea)

^f INSTITUTE OF MICROELECTRONICS   (Singapore)

^g NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Hydrothermal; Precursor concentration; ZnO

Indexed keywords

HETEROGENEOUS NUCLEATION; HOMOGENEOUS NUCLEATION; HYDROTHERMAL; HYDROTHERMALLY; LOW CONCENTRATIONS; PHOTOLUMINESCENCE MEASUREMENTS; PRECURSOR CONCENTRATION; SI SUBSTRATES; WELL-ALIGNED; X RAY DIFFRACTOMETERS; ZNO;

MATERIALS PROPERTIES; NUCLEATION; OPTICAL PROPERTIES; PHOTODEGRADATION; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION; ZINC OXIDE;

CONCENTRATION (PROCESS);

EID: 67649311459     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.04.012     Document Type: Article

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