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Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film

(8) Mi, Y Y a,b Wang, S J c Zegenhagen, J a Chai, J W c Pan, J S c Huan, C H A c Feng, Y P b Ong, C K b

a EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; EFFECTIVE WORK FUNCTION; EPITAXIAL QUALITY; GATE MATERIALS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; NI FILMS; NI METAL; NI THIN FILMS; P-TYPE; SCHOTTKY BARRIER HEIGHTS; SI(0 0 1); SINGLE-CRYSTALLINE THIN FILMS; X RAY PHOTOEMISSION SPECTROSCOPY;

CHARGE COUPLED DEVICES; CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; DIELECTRIC FILMS; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FILM GROWTH; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; NICKEL; OXIDE FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR GROWTH; THIN FILM DEVICES; WORK FUNCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649210577 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3153507 Document Type: Article

Times cited : (6)

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