Reentrant spin glass behavior in La0.8Sr0.2Mn1-xTixO3 manganites

Solid State Communications

Volumn 149, Issue 31-32, 2009, Pages 1274-1277

  Aslibeiki, B ^a   Kameli, P ^a   Salamati, H ^a  

^a ISFAHAN UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

A. Manganite; B. Doping; D. Reentrant spin glass; E. Ac susceptibility

Indexed keywords

A. MANGANITE; AC-SUSCEPTIBILITY MEASUREMENTS; B. DOPING; D. REENTRANT SPIN GLASS; E. AC SUSCEPTIBILITY; ELECTRICAL AND MAGNETIC PROPERTY; ELECTRICAL RESISTIVITY; FERROMAGNET; IMPURITY SUBSTITUTION; LATTICE PARAMETERS; MATRIX; METAL INSULATOR TRANSITION TEMPERATURE; REENTRANT SPIN GLASS; REENTRANT SPIN-GLASS BEHAVIOR; RESISTIVITY MEASUREMENT; TI CONTENT; TI DOPING; TRANSITION TEMPERATURE; XRD;

DOPING (ADDITIVES); ELECTRIC RESISTANCE; GLASS; LANTHANUM; MAGNETIC SUSCEPTIBILITY; MANGANESE; MANGANITES; METAL INSULATOR BOUNDARIES; OXIDE MINERALS; SPIN DYNAMICS; SPIN GLASS; SUPERCONDUCTING TRANSITION TEMPERATURE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

METAL INSULATOR TRANSITION;

EID: 67649159944     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.05.012     Document Type: Article

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