Influence of post-annealing on the properties of Sc-doped ZnO transparent conductive films deposited by radio-frequency sputtering

Applied Surface Science

Volumn 255, Issue 18, 2009, Pages 7942-7945

  Liu, Xueqiang ^a   Bi, Weihong ^a   Liu, Zhaolun ^a  

^a YANSHAN UNIVERSITY   (China)

Author keywords

Electrical properties; Radio frequency sputtering; Semiconductors; Thin films; Transparent conductive films

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; II-VI SEMICONDUCTORS; LIGHT TRANSMISSION; OPTICAL FILMS; OPTICAL PROPERTIES; RADIO WAVES; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; X RAY SPECTROSCOPY; ZINC OXIDE;

ENERGY DISPERSIONS; GLASS SUBSTRATES; HALL MEASUREMENTS; OPTICAL TRANSMISSION SPECTROSCOPY; POLYCRYSTALLINE; POST ANNEALING; RADIO FREQUENCY SPUTTERING; TRANSPARENT CONDUCTIVE FILMS;

CONDUCTIVE FILMS;

EID: 67549132502     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.173     Document Type: Article

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