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Volumn 79, Issue 6, 2009, Pages

Optimal control of the silicon-based donor-electron-spin quantum computing

Author keywords

[No Author keywords available]

Indexed keywords

CNOT GATE; CONTROL SEQUENCES; CONTROL VOLTAGES; CONTROLLED-NOT; CURRENT FABRICATION; DIPOLE DIPOLE INTERACTIONS; DISTANCE CONSTRAINTS; DONOR ATOMS; ELECTRON SPINS; ERROR THRESHOLD; EXTERNAL CONTROL; FAULT-TOLERANT QUANTUM COMPUTATION; GLOBAL CONTROL; GRADIENT ASCENT; HIGH FIDELITY; HYPERFINE; OPERATION TIME; OPTIMAL CONTROL METHODS; OPTIMAL CONTROLS; QUANTUM COMPUTING; SILICON-BASED;

EID: 67549128982     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.79.060306     Document Type: Article
Times cited : (16)

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    • Our architecture is similar to that of, so we may use the same methods proposed there to initialize the nuclear spins in the spin-up state. Alternatively, we may read out the electron-spin state (e.g. as described in) or wait until the electron spins relax to the spin-down ground state then apply MW and rf pulse to initialize the electron spins in the spin-up state and then to swap the nuclear- and electron-spin states. According to our simulations, the error in the initial nuclear-spin-up polarization should be kept smaller than 10-4 (or 10-3) in order to maintain FTQC.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.