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Volumn 31, Issue 9, 2009, Pages 1337-1339

TiO2 thin films doped with Pd and Eu for optically and electrically active TOS-Si heterojunction

Author keywords

Europium; Heterojunction; Palladium; Thin films; TiO2; TOS

Indexed keywords

ENERGY GAP; EUROPIUM; FILM PREPARATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT TRANSMISSION; NANOCRYSTALS; OXIDE FILMS; OXIDE MINERALS; OXIDE SEMICONDUCTORS; PALLADIUM; SEMICONDUCTOR DOPING; SUBSTRATES; TERNARY ALLOYS; TITANIUM DIOXIDE; X RAY DIFFRACTION;

EID: 67349266227     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2008.10.017     Document Type: Article
Times cited : (12)

References (14)
  • 3
    • 45849115358 scopus 로고    scopus 로고
    • Transparent Oxide Semiconductor Thin Films Transistors,
    • PCT US Patent WO /034449 A2, April 22, 2004
    • P.F. Carcia, R.S. McLean, Transparent Oxide Semiconductor Thin Films Transistors, PCT US Patent WO 2004/034449 A2, April 22, 2004.
    • (2004)
    • Carcia, P.F.1    McLean, R.S.2
  • 7
    • 67349127821 scopus 로고    scopus 로고
    • Powder Diffraction File, Joint Committee on Powder Diffraction Standards ASTM, Philadelphia, PA, 1967, Card 21-1276.
    • Powder Diffraction File, Joint Committee on Powder Diffraction Standards ASTM, Philadelphia, PA, 1967, Card 21-1276.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.