Impact of bridge- and double-bonded oxygen on OH-terminated Si quantum dots: A density-functional-Hartree-Fock study

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 117-121

  Konig D ^a   Rudd, J ^a   Conibeer, G ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Ab initio; Electronic structure; Quantum dots; Silicon; SiO2

Indexed keywords

CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; GROUND STATE; LIGHT ABSORPTION; NANOCRYSTALS; OXYGEN; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON OXIDES;

AB INITIO; APPROXIMANTS; DENSITY FUNCTIONALS; DOUBLE BONDS; ELECTRONIC.STRUCTURE; HARTREE-FOCK; OH -; OH-GROUPS; QUANTUM DOT; SI QUANTUM DOT;

SILICA;

EID: 67349259041     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.11.022     Document Type: Article

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