Impact of molecular structure of polymer in 193 nm resist performance

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 796-799

  Ismailova, Esma ^a   Tiron, Raluca ^b   Chochos, Christos L ^a   Brochon, Cyril ^a   Bandelier, Philippe ^b   Perret, Damien ^c   Sourd, Claire ^b   Brault, Christophe ^c   Serra, Christophe A ^a   Schlatter, Guy ^a   Hadziioannou, Georges ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

Author keywords

193 nm Lithography; Molecular weight; Photo acid generator; Polymer structure; Resist

Indexed keywords

193 NM LITHOGRAPHY; 193-NM RESISTS; AVERAGE MOLECULAR WEIGHTS; CRITICAL DIMENSIONS; METHACRYLATE MATRIXES; MICRO LITHOGRAPHIES; MICROELECTRONIC TECHNOLOGIES; MODEL RESISTS; NEW HIGHS; PHOTO ACID GENERATOR; POLYMER RESISTS; POLYMER STRUCTURE; RADIUS OF GYRATIONS; RESIST; SYNTHESIS AND CHARACTERIZATIONS;

ACIDS; DISSOLUTION; MOLECULAR WEIGHT; WEIGHING;

POLYMERS;

EID: 67349256413     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.072     Document Type: Article

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