GexNbSe2 and GexNbS2 intercalation compounds

Materials Research Bulletin

Volumn 44, Issue 7, 2009, Pages 1601-1607

  Kars, Mohammed ^a   Gomez Herrero A ^b   Rebbah, Allaoua ^a   Otero Diaz L C ^b  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

A. Layered compound; B. Crystal growth; C. Electron microscopy; C. X ray diffraction; D. Crystal structure

Indexed keywords

A. LAYERED COMPOUND; B. CRYSTAL GROWTH; C. ELECTRON MICROSCOPY; C. X-RAY DIFFRACTION; D. CRYSTAL STRUCTURE;

ATOMS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPES; ELECTRONS; GERMANIUM; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; HOLOGRAPHIC INTERFEROMETRY; INTERCALATION COMPOUNDS; SATELLITES; SEMICONDUCTING GERMANIUM COMPOUNDS; SINGLE CRYSTALS; VAN DER WAALS FORCES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CRYSTAL ATOMIC STRUCTURE;

EID: 67349232355     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2009.01.020     Document Type: Article

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