Ferromagnetism above room temperature in Mn-doped ZnO thin films

Superlattices and Microstructures

Volumn 46, Issue 1-2, 2009, Pages 101-106

  Di Trolio, A ^a   Veroli, C ^b   Testa, A M ^c   Fiorani, D ^c  

^a ISC CNR   (Italy)

^b CNR   (Italy)

^c CNR   (Italy)

Author keywords

Magnetic semiconductors; Thin films; Zinc oxide

Indexed keywords

ATOMIC CONCENTRATION; BASE MATERIAL; COERCIVE FIELD; DOPANT ATOMS; HIGH TEMPERATURE FERROMAGNETISM; MAGNETIC MEASUREMENTS; MN CONTENT; MN-DOPED ZNO; OXYGEN PRESSURE; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE;

ATOMS; CURIE TEMPERATURE; DOPING (ADDITIVES); FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; OXYGEN; PULSED LASER DEPOSITION; SATURATION MAGNETIZATION; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDE;

MANGANESE;

EID: 67349208798     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.01.016     Document Type: Article

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