MESFET DC model parameter extraction using Quantum Particle Swarm Optimization

Microelectronics Reliability

Volumn 49, Issue 6, 2009, Pages 660-666

  Sabat, Samrat L ^a   dos Santos Coelho, Leandro ^b   Abraham, Ajith ^c  

^a UNIVERSITY OF HYDERABAD   (India)

^b FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

DC MODELS; EXECUTION TIME; EXTRACTION TECHNIQUES; GALLIUM ARSENIDES; GATE LENGTHS; GATE WIDTHS; MEASURED DATUM; MEASURED RESULTS; METAL SEMICONDUCTORS; MODEL PARAMETERS; PERFORMANCE COMPARISONS; QUALITY OF SOLUTIONS; QUANTUM PARTICLE SWARM OPTIMIZATIONS; SIMULATED DATUM; SIMULATION RESULTS;

ARSENIC COMPOUNDS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; MESFET DEVICES; METAL RECOVERY; PARAMETER EXTRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MODELS;

PARTICLE SWARM OPTIMIZATION (PSO);

EID: 67349196846     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.03.005     Document Type: Article

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