Paramagnetic Ge dangling bond type defects at (1 0 0)Si1-xGex/SiO2 interfaces (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1621-1625

  Stesmans, A ^a   Somers, P ^a   Afanas'ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Condensation growth; Electron spin resonance; Ge insulator structure; Interface defect

Indexed keywords

CO-PRESENCE; CONDENSATION GROWTH; DEFECT PASSIVATION; ELECTRON SPIN RESONANCE; EPITAXIAL SI; GE/INSULATOR STRUCTURE; HETEROSTRUCTURES; INTERFACE DEFECT; INTERFACE DEFECTS; MULTI FREQUENCY; SELECTIVE OXIDATION; SIGE LAYERS; SPECTRAL ANALYSIS; TRIPLE BONDS;

CONDENSATION; DANGLING BONDS; DEFECTS; ELECTRONS; ELECTROSLAG REMELTING; GERMANIUM; PARAMAGNETIC RESONANCE; PASSIVATION; POINT DEFECTS; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTRUM ANALYZERS; SPIN DYNAMICS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 67349183398     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.109     Document Type: Article

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