Temperature dependence of infrared emissivity of doped manganese oxides in different wavebands (3-5 and 8-14 μm)

Journal of Alloys and Compounds

Volumn 479, Issue 1-2, 2009, Pages 420-422

  Shen, Xingmei ^a   Xu, Guoyue ^a   Shao, Chunming ^a   Cheng, Chuanwei ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Ceramics; Light absorption and reflection; Optical properties; Solid state reaction

Indexed keywords

CA-DOPED; CERAMICS; CRYSTAL DISTORTIONS; DOPED SAMPLES; INFRARED EMISSIVITIES; LIGHT ABSORPTION AND REFLECTION; MANGANESE OXIDES; METAL-INSULATOR PHASE TRANSITIONS; NORMAL EMISSIVITIES; SOLID-STATE REACTION; SOLID-STATE REACTION METHODS; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; WAVE BANDS; XRD;

ABSORPTION; CALCIUM; CERAMIC MATERIALS; ELECTROMAGNETIC WAVE EMISSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED ABSORPTION; LANTHANUM; LIGHT ABSORPTION; LIGHT REFLECTION; MANGANESE; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; OPTICAL PROPERTIES; OXIDES; SEMICONDUCTING SILICON; TEMPERATURE DISTRIBUTION;

METAL INSULATOR TRANSITION;

EID: 67349165534     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.12.090     Document Type: Article

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