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Volumn 159, Issue 12, 2009, Pages 1131-1134

Interface effect of oxygen doping in polythiophene

Author keywords

Glass substrate; On off ratio; Poly(3 hexylthiophene) transistor

Indexed keywords

COATED FILMS; DE-DOPING; DOPING LEVELS; ELECTRICAL CHARACTERISTIC; GATE-DIELECTRIC INTERFACES; GLASS SUBSTRATE; GLASS SUBSTRATES; HYDROXYL GROUPS; IN-VACUUM; INTERFACE EFFECT; ON-OFF RATIO; OXYGEN DOPING; OXYGEN LEVELS; POLY (3-HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE) TRANSISTOR; POLY-THIOPHENE; SPIN-COATED FILMS; TIME EVOLUTIONS;

EID: 67349163218     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.01.048     Document Type: Article
Times cited : (18)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.