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Volumn 159, Issue 12, 2009, Pages 1131-1134
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Interface effect of oxygen doping in polythiophene
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Author keywords
Glass substrate; On off ratio; Poly(3 hexylthiophene) transistor
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Indexed keywords
COATED FILMS;
DE-DOPING;
DOPING LEVELS;
ELECTRICAL CHARACTERISTIC;
GATE-DIELECTRIC INTERFACES;
GLASS SUBSTRATE;
GLASS SUBSTRATES;
HYDROXYL GROUPS;
IN-VACUUM;
INTERFACE EFFECT;
ON-OFF RATIO;
OXYGEN DOPING;
OXYGEN LEVELS;
POLY (3-HEXYLTHIOPHENE);
POLY(3-HEXYLTHIOPHENE) TRANSISTOR;
POLY-THIOPHENE;
SPIN-COATED FILMS;
TIME EVOLUTIONS;
CARRIER MOBILITY;
GATE DIELECTRICS;
GATES (TRANSISTOR);
GLASS;
OXIDE MINERALS;
OXYGEN;
QUARTZ;
SUBSTRATES;
SULFUR COMPOUNDS;
TRANSISTORS;
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EID: 67349163218
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/j.synthmet.2009.01.048 Document Type: Article |
Times cited : (18)
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References (14)
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