Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 884-889

  Dipalo, M ^a   Gao, Z ^a   Scharpf, J ^a   Pietzka, C ^a   Alomari, M ^a   Medjdoub, F ^a   Carlin, J F ^b   Grandjean, N ^b   Delage, S ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b EPFL   (Switzerland)

^c ALCATEL THALES III V LAB   (France)

Author keywords

Boron doped NCD; Electrochemistry; GaN heterostructure

Indexed keywords

BORON DOPED DIAMOND; BORON DOPED NCD; CHEMFET; CHEMICAL INERTNESS; CURRENT MODULATION; DIAMOND ELECTRODE; ELECTROCHEMICAL GATES; ELECTROCHEMICAL WINDOW; FUNCTIONAL DEVICES; GAN HETEROSTRUCTURE; HARSH ENVIRONMENT; HETEROSTRUCTURES; HIGH CURRENTS; HIGH SENSITIVITY; HIGH STABILITY; INALN/GAN HETEROSTRUCTURE; ISFET TECHNOLOGY; MONOLITHICALLY INTEGRATED; NEW DEVICES; OVER POTENTIAL; PH CYCLING; PH SENSITIVITY; PINCH OFF VOLTAGE; SENSOR AND ACTUATORS;

BIOCHEMISTRY; BIOCOMPATIBILITY; BORON; CHEMICAL STABILITY; DIAMONDS; ELECTROCHEMICAL ELECTRODES; ELECTROLYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; PH; SEMICONDUCTING GALLIUM;

ELECTROCHEMISTRY;

EID: 67349138210     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.011     Document Type: Article

References (19)

1. In: Pan L., and Kania D. (Eds). Diamond: Electronic Properties and Applications vol. 328 (1995), Kluwer Acad. Publ., Boston 329 472
2. Kawarada H. Surf. Sci. Rep. 26 (1996) 205
3. Denisenko A., Jamornmarn G., El-Hajj H., and Kohn E. Diamond Relat. Mater. 16 (2007) 905
4. Dipalo M., Pietzka C., Denisenko A., El-Hajj H., and Kohn E. Diamond Relat. Mater. 17 (2008) 1241
5. Song K.S., Degawa M., Nakamura Y., Kanazawa H., Umezawa H., and Kawarada H. Jpn. J. Appl. Phys. (Express Letter) 43 (2004) 814-817
6. Garrido J., Härtl A., Kuch S., Stutzmann M., Williams O.A., and Jackmann R.B. Appl. Phys. Lett. 86 (2005) 332
7. Nebel C.E., Kato H., Rezek B., Shin D., Takeuchi D., Watanabe H., et al. Diamond Relat. Mater. 15 (2005) 264
8. Rao T., Tryk D., Hashimoto K., and Fujishima A. J. Electrochem. Soc. 146 (1999) 680
9. Sumant A.V., Auciello O., Yuan H.-C., Ma Z., O ́Connor S.D., Adiga V., et al. NDNC 2007, Osaka (Japan) (May 2007) 52 abstract 5-2
10. Seelmann-Eggebert M., Meisen P., Schaudel F., Koidl P., Vescan A., and Leier H. Diamond Relat. Mater. 10 (2001) 744
11. F. Medjdoub, et al. Int. Electron Devices Meeting (IEDM) (2006), Tech. Digest, 927.
12. Dipalo M., Medjdoub F., Alomari M., Rossi S., El-Hajj H., Carlin J.-F., et al. NDNC 2008, Taipei (Taiwan) (May 2008) 345 abstract P1-161
13. Kohn E., Dipalo M., Alomari M., Medjdoub F., Carlin J.-F., Grandjean N., et al. 66th DRC, Santa Barbara (June 2008) 295 abstract VII.A-7
14. Li C.L., Huang B.R., Chattopadhyay S., Chen K.H., and Chen L.C. Appl. Phys. Lett. 84 (2004) 2676
15. Sakata T., Matsumoto S., Nakajima Y., and Miyahara Y. Jpn. J. Appl. Phys. 44 (2005) 2860-2863
16. Medjdoub F., Alomari M., Carlin J.-F., Gonschorek M., Feltin E., Py M.A., et al. IEEE Electron Device Letters (2008) 422
17. Janischowsky K., Ebert W., and Kohn E. Diamond Relat. Mater. 12 (2003) 336
18. Kunze M., Vescan A., Dollinger G., Bergmaier A., and Kohn E. Carbon (1999) 787
19. Pietzka C., Denisenko A., Alomari M., Medjdoub F., Carlin J.-F., Feltin E., et al. Journal of Electronic Materials 37 (2008) 616