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Volumn 480, Issue 2, 2009, Pages 897-902
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The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTiO3 thin films
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Author keywords
Metal oxide semiconductor structure; Physical vapour deposition; X ray diffraction
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Indexed keywords
CHAMBER PRESSURE;
CURRENT-VOLTAGE MEASUREMENTS;
DEPOSITED FILMS;
DEPOSITION TEMPERATURES;
DIELECTRIC CONSTANTS;
ELECTRICAL PROPERTY;
GRAIN SIZE;
METAL INSULATOR SEMICONDUCTOR CAPACITORS;
METAL-OXIDE SEMICONDUCTOR STRUCTURE;
PHYSICAL VAPOUR DEPOSITION;
POLYCRYSTALLINE MICROSTRUCTURE;
RADIO FREQUENCY MAGNETRON SPUTTERING;
RF-POWER;
SI(1 0 0);
SUBSTRATE TEMPERATURE;
XRD;
ATOMIC FORCE MICROSCOPY;
DIFFRACTION;
ELECTRIC PROPERTIES;
MAGNETRON SPUTTERING;
METAL INSULATOR BOUNDARIES;
MICROSTRUCTURE;
MIS DEVICES;
PRESSURE EFFECTS;
SEMICONDUCTING SILICON COMPOUNDS;
STRUCTURAL METALS;
SWITCHING CIRCUITS;
THERMAL EFFECTS;
THIN FILMS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
SUBSTRATES;
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EID: 67349132374
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2009.02.065 Document Type: Article |
Times cited : (11)
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References (18)
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