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Volumn 480, Issue 2, 2009, Pages 897-902

The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTiO3 thin films

Author keywords

Metal oxide semiconductor structure; Physical vapour deposition; X ray diffraction

Indexed keywords

CHAMBER PRESSURE; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITED FILMS; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; GRAIN SIZE; METAL INSULATOR SEMICONDUCTOR CAPACITORS; METAL-OXIDE SEMICONDUCTOR STRUCTURE; PHYSICAL VAPOUR DEPOSITION; POLYCRYSTALLINE MICROSTRUCTURE; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-POWER; SI(1 0 0); SUBSTRATE TEMPERATURE; XRD;

EID: 67349132374     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.02.065     Document Type: Article
Times cited : (11)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.