Microstructure, electrical properties of CeO2-doped (K 0.5Na0.5)NbO3 lead-free piezoelectric ceramics

Journal of Materials Science

Volumn 44, Issue 10, 2009, Pages 2466-2470

  Gao, Daojiang ^a   Kwok, K W ^a   Lin, Dunmin ^a   Chan, H L W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CE-DOPING; CERAMIC FABRICATION TECHNIQUES; DIELECTRIC AND PIEZOELECTRIC PROPERTIES; DOPING LEVELS; ELECTRICAL PROPERTIES; ELECTRO-MECHANICAL COUPLING COEFFICIENTS; LEAD-FREE PIEZOELECTRIC CERAMICS; LOSS TANGENTS; ORTHORHOMBIC PEROVSKITES; PARAELECTRIC PHASE TRANSITIONS; PIEZOELECTRIC COEFFICIENTS; RELATIVE PERMITTIVITIES;

CERIUM; CERIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTROMECHANICAL DEVICES; GRAIN GROWTH; OXIDE MINERALS; PEROVSKITE; PHASE TRANSITIONS; PIEZOELECTRIC CERAMICS; PIEZOELECTRIC TRANSDUCERS; SODIUM;

PIEZOELECTRICITY;

EID: 67349124153     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-009-3314-1     Document Type: Article

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