Influence of SnO 2 films with high resistance on the performance of CdTe solar cells

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 7, 2009, Pages 661-665

  Chen, Qi ^a   Zeng, Guanggen ^a   Song, Huijin ^a   Zheng, Jiagui ^a   Feng, Lianghuan ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; CDS; CDTE SOLAR CELLS; ELECTRICAL PROPERTIES; F LAYERS; FILL FACTORS; HIGH RESISTANCES; INSERTION LAYERS; LIGHT TRANSMITTANCES; NEW YORK; P-N JUNCTIONS; SATURATION CURRENT DENSITIES; SHORT WAVES; TRANSPARENT CONDUCTIVE; TRANSPARENT CONDUCTIVE OXIDES; TUNNELING LEAKAGES;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; CONVERSION EFFICIENCY; ELECTRIC PROPERTIES; F REGION; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

MAGNETIC THIN FILMS;

EID: 67349106677     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9782-2     Document Type: Article

References (17)

1. X. Wu, R.G. Dhere, D.S. Albin et al., in Proceedings of NCPV Program Review Meeting, AIP, New York, 2001, pp. 47-48
2. D.L. Batzner, R. Wendt, A. Romeo et al., Thin Solid Films 361-362, 463 (2000). doi: 10.1016/S0040-6090(99)00842-1
3. Y. Shao, J.G. Zheng, J.Q. Zhang et al., J. Mater. Sci. Mater. Electron. 13, 503 (2002). doi: 10.1023/A:1016116422182
4. W. Li, L.H. Feng, L.L. Wu et al., Acta Phys. Sin. 54, 1879 (2005). (in Chinese)
5. Z. Lei, L.H. Feng, J.Q. Zhang et al., Optoelectronic Technol. 24, 5 (2004). (in Chinese)
6. Z. Lei, L.H. Feng, J.Q. Zhang et al., Acta Energiae Solaris Sin. 25, 624 (2004). (in Chinese)
7. L.L. Wu, L.H. Feng, W. Cai et al., Chin. J. Semiconductors 24, 827 (2003). (in Chinese)
8. Q. Yan, L.H. Feng, L.L. Wu et al., Chin. J. Semiconductors 25, 424 (2004). (in Chinese)
9. Y.Q. Lei, New Energy Materials (Tianjin University Press, China, 2002), pp. 305, 306, 312, 313 (in Chinese)
10. W. Li, Dissertation for PhD, 2004, p. 47. (in Chinese)
11. E.K. Liu, Physics of Semiconductors (National Defense Industry Press, China, 1997), pp. 162-171, 229-232. (in Chinese)
12. S.M. Sze, Physics of Semiconductor Devices (Beijing Science Press, China, 1987), pp. 323-326. (in Chinese)
13. A. Niemegeers, M. Burgelman et al., J. Appl. Phys. 81, 2881 (1997). doi: 10.1063/1.363946
14. X.W. Yang, J.G. Zheng et al., in 15th International Photovoltaic Science and Engineering Conference, Shanghai, China, p. 1209, 2005. (in Chinese)
15. X. Wu, J.C. Keane, R.G. Dhere, C. DeHart, D.S. Albin et al., in Proceedings of NCPV Program Review Meeting (AIP, New York, 2001), pp. 22-26
16. J.Q. Zhang, Dissertation for PhD, 2002, p. 94. (in Chinese)
17. S.M. Sze, Modern Semiconductor Device Physics (Beijing Science Press, China, 2002), pp. 367, 388-390 (in Chinese)