Voltage-tunable lateral shifts of ballistic electrons in semiconductor quantum slabs

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Chen, Xi ^a   Ban, Yue ^a   Li, Chun Fang ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; BALLISTIC ELECTRONS; DIELECTRIC SLABS; INCIDENCE ANGLES; INCIDENT ENERGY; LATERAL SHIFTS; NUMERICAL CALCULATION; POTENTIAL APPLICATIONS; QUANTUM-ELECTRONIC DEVICES; STRUCTURE PARAMETER; TRANSMITTED LIGHT; VOLTAGE-TUNABLE;

ELECTRIC FIELDS; QUANTUM ELECTRONICS;

BALLISTICS;

EID: 67249138241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3124450     Document Type: Article

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