Effect of isoelectronic substitution of Bi on the photoelectrical properties in amorphous Sn-Sb-Se films

Thin Solid Films

Volumn 517, Issue 21, 2009, Pages 5965-5968

  Ahmad, Muneer ^a   Kumar, P ^a   Thangaraj, R ^a  

^a GURU NANAK DEV UNIVERSITY   (India)

Author keywords

A. Semiconductors; A. Thin films; D. Optical properties; X ray diffraction

Indexed keywords

A. SEMICONDUCTORS; A. THIN FILMS; AMORPHOUS THIN FILMS; D. OPTICAL PROPERTIES; ISOELECTRONIC SUBSTITUTION; LIGHT INTENSITY; OPTICAL GAP; PHOTO-ELECTRICAL PROPERTIES; POWER LAW; THERMAL EVAPORATION TECHNIQUE; TWO-COMPONENT;

ACTIVATION ENERGY; AMORPHOUS FILMS; DIFFRACTION; LIGHT; OPTICAL PROPERTIES; PHOTOCURRENTS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EVAPORATION; THIN FILMS; TIN; X RAY DIFFRACTION;

OPTICAL FILMS;

EID: 67249109101     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.130     Document Type: Article

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