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Volumn 44, Issue 5, 2009, Pages 505-510
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Thermoelectric properties of Tl-doped Bi2Se3 single crystals
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Author keywords
Crystal defects; Narrow gap semiconductors; Single crystals; Thermoelectric properties
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Indexed keywords
BRIDGMAN TECHNIQUES;
CONCENTRATION OF;
ELECTRICAL CONDUCTIVITY;
FREE ELECTRON;
HALL COEFFICIENT;
LATTICE FORMATION;
LATTICE PARAMETERS;
NARROW GAP SEMICONDUCTORS;
POWER FACTORS;
SUBSTITUTIONAL DEFECTS;
TEMPERATURE DEPENDENCE;
THERMOELECTRIC PROPERTIES;
BISMUTH;
DEFECTS;
ELECTRIC CONDUCTIVITY;
ELECTRIC POWER FACTOR;
POINT DEFECTS;
SELENIUM;
SEMICONDUCTING SELENIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
TECHNETIUM;
TERNARY SYSTEMS;
THALLIUM;
THERMOELECTRIC EQUIPMENT;
THERMOELECTRICITY;
SINGLE CRYSTALS;
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EID: 67049119825
PISSN: 02321300
EISSN: 15214079
Source Type: Journal
DOI: 10.1002/crat.200800615 Document Type: Article |
Times cited : (51)
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References (13)
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