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Volumn 44, Issue 5, 2009, Pages 505-510

Thermoelectric properties of Tl-doped Bi2Se3 single crystals

Author keywords

Crystal defects; Narrow gap semiconductors; Single crystals; Thermoelectric properties

Indexed keywords

BRIDGMAN TECHNIQUES; CONCENTRATION OF; ELECTRICAL CONDUCTIVITY; FREE ELECTRON; HALL COEFFICIENT; LATTICE FORMATION; LATTICE PARAMETERS; NARROW GAP SEMICONDUCTORS; POWER FACTORS; SUBSTITUTIONAL DEFECTS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES;

EID: 67049119825     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800615     Document Type: Article
Times cited : (51)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.