Free carrier lifetime modification in silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7220, Issue , 2009, Pages

  Wright, N M ^a   Thomson, D J ^a   Litvinenko, K L ^a   Headley, W R ^a   Smith, A J ^a   Knights, A P ^b   Deane, J H B ^a   Gardes, F Y ^a   Mashanovich, G Z ^a   Gwilliam, R ^a   Reed, G T ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

Integrated optoelectronic circuits; Optical amplifiers; Waveguides

Indexed keywords

CRYSTALLINE SILICONS; FREE CARRIERS; INTEGRATED DIODES; IRRADIATION ENERGY; NET GAIN; OPTICAL ABSORPTION; OPTICAL AMPLIFIERS; PROPAGATION LOSS; RAMAN AMPLIFICATION; RAMAN PROCESS; REVERSE BIAS; SILICON ION; SILICON ION IMPLANTATION; SILICON RIB WAVEGUIDES; TWO PHOTON ABSORPTION;

ABSORPTION; AMPLIFICATION; CARRIER LIFETIME; CHEMICAL MODIFICATION; ION BOMBARDMENT; ION IMPLANTATION; LIGHT ABSORPTION; LIGHT AMPLIFIERS; MULTIPHOTON PROCESSES; OPTICAL DEVICES; OPTICAL SWITCHES; PHOTONIC DEVICES; WAVEGUIDES;

INTEGRATED OPTOELECTRONICS;

EID: 66749182300     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810907     Document Type: Conference Paper

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