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Volumn 9, Issue 6, 2009, Pages 2384-2389

Nanostructured gold films for SERS by block copolymer-templated galvanic displacement reactions

Author keywords

[No Author keywords available]

Indexed keywords

DENSE ARRAYS; GALVANIC DISPLACEMENT; HIGH SPATIAL DENSITY; HIGH-THROUGHPUT; HOT SPOT; LOCAL CURVATURE; NANO-POROUS; NANOPILLARS; NANOSTRUCTURED GOLD; NANOSTRUCTURED SUBSTRATES; NARROW GAP; REVERSE MICELLES; SURFACE-ENHANCED RAMAN SCATTERING; TEMPLATED;

EID: 66749181172     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl900939y     Document Type: Article
Times cited : (138)

References (40)
  • 29
    • 66749100637 scopus 로고    scopus 로고
    • 2 (70/30 v/v) at 80°C for 30 minutes. After rinsing with deonized water and drying with nitrogen gas, the wafers were immersed into 5% HF for 5 s prior to the deposition of the micelle monolayer.
    • 2 (70/30 v/v) at 80°C for 30 minutes. After rinsing with deonized water and drying with nitrogen gas, the wafers were immersed into 5% HF for 5 s prior to the deposition of the micelle monolayer.
  • 33
    • 66749094741 scopus 로고    scopus 로고
    • We used a JEOL JSM 6340F scanning electron microscope operated at 8 kV
    • We used a JEOL JSM 6340F scanning electron microscope operated at 8 kV.
  • 34
    • 66749101242 scopus 로고    scopus 로고
    • Cross-sectional specimens were prepared by embedding the samples in epoxy resin and slicing them normal to the wafer surface with a diamond wire saw. The ∼400 μm thick sections thus obtained were ground, polished to a thickness of ∼80 μm, dimple-ground, further polished to a thickness of less than 15 μm and thinned to electron transparency by ion-milling from both sides with Ar PIPS, Gatan, TEM investigations were performed with a Phillips CM20T operated at 200 kV
    • Cross-sectional specimens were prepared by embedding the samples in epoxy resin and slicing them normal to the wafer surface with a diamond wire saw. The ∼400 μm thick sections thus obtained were ground, polished to a thickness of ∼80 μm, dimple-ground, further polished to a thickness of less than 15 μm and thinned to electron transparency by ion-milling from both sides with Ar (PIPS, Gatan). TEM investigations were performed with a Phillips CM20T operated at 200 kV.
  • 39
    • 66749190543 scopus 로고    scopus 로고
    • Four Raman spectra of a 10-4 molar aqueous CV solution were measured applying a laser intensity of 6.4 mW and then averaged. The height of the peak at 1620 cm-1, which amounted to 852 counts, was divided by 14.22, the ratio of the laser intensities applied to acquire the Raman and the SERS spectra, respectively. Thus, a corrected peak height of 60 counts was obtained. The effective excitation in solution of 174.6 μm3 was derived using the method described in ref 38, and the number of molecules located within the effective excitation was calculated to be about 10 500 000
    • 3 was derived using the method described in ref 38, and the number of molecules located within the effective excitation volume was calculated to be about 10 500 000.
  • 40
    • 66749171703 scopus 로고    scopus 로고
    • Au was sputtered onto the smooth surface of a Si wafer for 16 seconds (400 W, direct current) using a Discovery-18 sputter coater (Denton Vacuum). The nominal layer thickness was 20 nm.
    • Au was sputtered onto the smooth surface of a Si wafer for 16 seconds (400 W, direct current) using a Discovery-18 sputter coater (Denton Vacuum). The nominal layer thickness was 20 nm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.