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Cross-sectional specimens were prepared by embedding the samples in epoxy resin and slicing them normal to the wafer surface with a diamond wire saw. The ∼400 μm thick sections thus obtained were ground, polished to a thickness of ∼80 μm, dimple-ground, further polished to a thickness of less than 15 μm and thinned to electron transparency by ion-milling from both sides with Ar PIPS, Gatan, TEM investigations were performed with a Phillips CM20T operated at 200 kV
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Cross-sectional specimens were prepared by embedding the samples in epoxy resin and slicing them normal to the wafer surface with a diamond wire saw. The ∼400 μm thick sections thus obtained were ground, polished to a thickness of ∼80 μm, dimple-ground, further polished to a thickness of less than 15 μm and thinned to electron transparency by ion-milling from both sides with Ar (PIPS, Gatan). TEM investigations were performed with a Phillips CM20T operated at 200 kV.
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Four Raman spectra of a 10-4 molar aqueous CV solution were measured applying a laser intensity of 6.4 mW and then averaged. The height of the peak at 1620 cm-1, which amounted to 852 counts, was divided by 14.22, the ratio of the laser intensities applied to acquire the Raman and the SERS spectra, respectively. Thus, a corrected peak height of 60 counts was obtained. The effective excitation in solution of 174.6 μm3 was derived using the method described in ref 38, and the number of molecules located within the effective excitation was calculated to be about 10 500 000
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3 was derived using the method described in ref 38, and the number of molecules located within the effective excitation volume was calculated to be about 10 500 000.
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40
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66749171703
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Au was sputtered onto the smooth surface of a Si wafer for 16 seconds (400 W, direct current) using a Discovery-18 sputter coater (Denton Vacuum). The nominal layer thickness was 20 nm.
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Au was sputtered onto the smooth surface of a Si wafer for 16 seconds (400 W, direct current) using a Discovery-18 sputter coater (Denton Vacuum). The nominal layer thickness was 20 nm.
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