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Volumn 5, Issue 6, 2008, Pages 1627-1629
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InN/In2O3 heterostructures
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC ARRANGEMENT;
DEVICE APPLICATION;
EPITAXIAL RELATIONSHIPS;
EPITAXIALLY GROWN;
GATE MATERIALS;
HETEROSTRUCTURES;
HETEROSYSTEMS;
HIGH FREQUENCY FIELD;
HIGH QUALITY;
PHENOMENOLOGICAL MODELS;
SINGLE-CRYSTALLINE;
ELECTRONIC PROPERTIES;
NITRIDES;
SEMICONDUCTOR GROWTH;
FIELD EFFECT TRANSISTORS;
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EID: 66749086410
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778549 Document Type: Conference Paper |
Times cited : (9)
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References (8)
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