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Volumn 5, Issue 6, 2008, Pages 1627-1629

InN/In2O3 heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENT; DEVICE APPLICATION; EPITAXIAL RELATIONSHIPS; EPITAXIALLY GROWN; GATE MATERIALS; HETEROSTRUCTURES; HETEROSYSTEMS; HIGH FREQUENCY FIELD; HIGH QUALITY; PHENOMENOLOGICAL MODELS; SINGLE-CRYSTALLINE;

EID: 66749086410     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778549     Document Type: Conference Paper
Times cited : (9)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.