Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth

Electronics Letters

Volumn 45, Issue 10, 2009, Pages 521-522

  Morishima, Y ^a   Yaguchi, J ^a   Mukai, A ^a   Ohgoh, T ^a   Asano, H ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

1060 NM; 3 DB BANDWIDTH; BAND GAPS; INGAAS/GAAS; INGAAS/GAAS MQWS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; MOVPE GROWTH; MULTIPLE QUANTUM WELLS; OUTPUT POWER; SELECTIVE AREAS; SUPERLUMINESCENT DIODE;

CRYSTAL GROWTH; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 66649091211     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2684     Document Type: Article

References (4)

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