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Volumn 311, Issue 13, 2009, Pages 3428-3434
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Single crystals growth and absorption spectra of Cr3+-doped Al2-xInx(WO4)3 solid solutions
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Author keywords
A2. Growth from high temperature solutions; B1. Tungstates; B3. Solid state lasers
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Indexed keywords
A2. GROWTH FROM HIGH-TEMPERATURE SOLUTIONS;
B1. TUNGSTATES;
B3. SOLID-STATE LASERS;
BASIC PARAMETERS;
BROADBAND EMISSION SPECTRA;
CALCULATED VALUES;
CONCENTRATION OF;
CRYSTAL COMPOSITION;
CRYSTAL FIELD STRENGTH;
CRYSTAL FIELDS;
DEFECT-FREE;
DISTRIBUTION COEFFICIENT;
GROWTH CONDITIONS;
OPTICAL ABSORPTION SPECTRUM;
OPTIMAL CONDITIONS;
RADIAL TEMPERATURE;
SEED ORIENTATION;
SINGLE CRYSTALS GROWTH;
SOLUTION COOLING;
SPEED OF ROTATION;
STARTING SOLUTIONS;
TOP SEEDED SOLUTION GROWTH;
ABSORPTION;
ALUMINUM;
CHROMIUM;
COOLING;
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
CRYSTALLIZATION;
EMISSION SPECTROSCOPY;
GRAIN BOUNDARIES;
LASERS;
LIGHT ABSORPTION;
PARAMETER ESTIMATION;
SOLID SOLUTIONS;
SOLID STATE LASERS;
SOLIDIFICATION;
SPECTRUM ANALYSIS;
TUNGSTEN COMPOUNDS;
SINGLE CRYSTALS;
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EID: 66649089734
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.03.033 Document Type: Article |
Times cited : (11)
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References (30)
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