Nanoscale reversible mass transport for archival memory

Nano Letters

Volumn 9, Issue 5, 2009, Pages 1835-1839

  Begtrup, G E ^a   Gannett, W ^a   Yuzvinsky, T D ^a   Crespi, V H ^b   Zettl, A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHIVAL MEMORY; INFORMATION DENSITY; IRON NANOPARTICLES; MASS TRANSPORT; MEMORY DEVICE; MEMORY STATE; NANO SCALE; NANOSCALE PRECISION; NANOTUBE CHANNELS; NON-VOLATILE MEMORIES;

ELECTROMECHANICAL DEVICES; NANOSTRUCTURED MATERIALS;

THERMODYNAMIC STABILITY;

IRON; METAL NANOPARTICLE; NANOTUBE;

ARTICLE; CHEMISTRY; INFORMATION CENTER; INSTRUMENTATION; MEMORY; NANOTECHNOLOGY; THERMODYNAMICS;

ARCHIVES; IRON; MEMORY; METAL NANOPARTICLES; NANOTECHNOLOGY; NANOTUBES; THERMODYNAMICS;

EID: 66549091350     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803800c     Document Type: Article

References (24)

1. Eigler, D. M.; Schweizer, E. K. Nature 1990, 344, 524.
2. Chesher, M. The storage lifetime of removable media - Backup/ Restore. Comput. Technol. Rev. 2003.
3. Darlington, J.; Finney, A.; Pearce, A. Microform Imaging Rev. 2003, 32, 113LP.
4. Lee, S. W.; Lee, D. S.; Morjan, R. E.; Jhang, S. H.; Sveningsson, M.;Nerushev, O. A.; Park, Y. W.; Campbell, E. E. B. Nano Lett. 2004, 4, 2027.
5. Rueckes, T.; Kim, K.; Joselevich, E.; Tseng, G. Y.; Cheung, C.-L.; Lieber, C. M. Science 2000, 289,94.
6. Deshpande, V. V.; Chiu, H.-Y.; Postma, H. W. C.; Miko, C.; Forro, L.; Bockrath, M. Nano Lett. 2006, 6, 1092.
7. Kwon, Y.-K.; Tomanek, D.; Iijima, S. Phys. Rev. Lett. 1999, 82, 1470LP.
8. Regan, B. C.; Aloni, S.; Ritchie, R. O.; Dahmen, U.; Zettl, A. Nature 2004, 428, 924.
9. Dong, L. X.; Tao, X. Y.; Zhang, L.; Zhang, X. B.; Nelson, B. J. Nano Lett. 2007, 7,58.
10. Jin, C. H.; Suenaga, K.; Iijima, S. Nat. Nanotechnol. 2008, 3,17.
11. Jensen, K.; Mickelson, W.; Han, W.; Zettl, A. Appl. Phys. Lett. 2005, 86, 173107.
12. Svensson, K.; Olin, H.; Olsson, E. Phys. Rev. Lett. 2004, 93, 145901.
13. In cases where the nanotube contains severe internal defect structure, the nanoparticle can become pinned to the defect, compromising reversibility. In high-quality nanotubes with smooth bores, such pinning is not observed.
14. Kumar, P.; Yuan, X. H.; Kumar, M. R.; Kind, R.; Li, X. Q.; Chadha, R. K. Nature 2007, 449, 894.
15. Sellers, J.; Kachar, B. Science 1990, 249, 406.
16. Nishikawa, S.; Homma, K.; Komori, Y.; Iwaki, M.; Wazawa, T.; Hikikoshi Iwone, A.; Saito, J.; Ikebe, R.; Katayama, E.; Yanagida, T.; Ikebe, M. Biochem. Biophys. Res. Commun. 2002, 290, 311.
17. The signal has been linear-drift corrected to account for contact annealing.
18. Frank, S.; Poncharal, P.; Wang, Z. L.; de Heer, W. A. Science 1998, 280, 1744.
19. Choi, H. J.; Ihm, J.; Yoon, Y. G.; Louie, S. G. Phys. Rev.B 1999, 60, 14009.
20. Bourlon, B.; Miko, C.; Forro, L.; Glattli, D. C.; Bachtold, A. Phys. Rev. Lett. 2004, 93, 176806.
21. Yuzvinsky, T. D.; Mickelson, W.; Aloni, S.; Begtrup, G. E.; Kis, A.; Zettl, A. Nano Lett. 2006, 6, 2718.
22. Note that the local electric field near the inclusion may be larger than the average field between the electrodes if the vicinity of the inclusion experiences enhanced Ohmic dissipation.
23. 24 and the iron-tube wall interaction is likely to be stronger than the interaction between two sp-2 carbon layers. Also, the iron lattice is more amenable to in-plane structural relaxation than is an extremely stiff sp-2 carbon lattice.
24. Kolmogorov, A. N.; Crespi, V. H.; Schleier-Smith, M. H.; Ellenbogen, J. C. Phys. Rev. Lett. 2004, 92, 085503.