Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 240-241

  Yokoi, H ^a   Mizumoto, T ^a   Masaki, H ^a   Futakuchi, N ^b   Ohtsuka, T ^b   Nakano, Y ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); DISSIMILAR METALS; MAGNETOOPTICAL EFFECTS; OXIDATION; PHASE SHIFTERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM INDIUM ARSENIDE; MAGNETOOPTIC WAVEGUIDE; OPTICAL ISOLATOR; SELECTIVE OXIDATION; WAFER DIRECT BONDING;

MAGNETOOPTICAL DEVICES;

EID: 6644225298     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010145     Document Type: Article

References (4)

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2. WADA, H., OGAWA, Y., and KAMIJOH, T.: 'Electrical characteristics of directly-bonded GaAs and InP', Appl. Phys. Lett., 1993, 62, (7), pp. 738-740
3. YOKOI, H., MIZUMOTO, T., SHINJO, N., FUTAKUCHI, N., and NAKANO, Y.: 'Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift', Appl. Opt., 2000, 39, (33), pp. 6158-6164
4. OHNOKI, N., KOYAMA, F., and IGA, K.: 'Superlattice AlAs/AlInAs oxide current aperture for long wavelength InP-based verticalcavity surface-emitting laser structure', Appl. Phys. Lett., 1998, 73, (22), pp. 3262-3264