Surface segregation of Si and its effect on oxygen adsorption on a γ-TiAl(111) surface from first principles

Journal of Physics Condensed Matter

Volumn 21, Issue 22, 2009, Pages

  Liu, Shi Yu ^a   Shang, Jia Xiang ^a   Wang, Fu He ^b   Zhang, Yue ^a  

^a BEIHANG UNIVERSITY   (China)

^b CAPITAL NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED OXYGEN; ADSORPTION SITE; ATOMIC GEOMETRY; DENSITY OF STATE; FIRST-PRINCIPLE; FIRST-PRINCIPLES CALCULATION; HIGH OXYGEN COVERAGE; METAL LAYER; NEAREST NEIGHBORS; OXYGEN ADSORPTION; OXYGEN ATOM; SI ATOMS; SURFACE LAYERS; SURFACE RIPPLES; TI ATOMS;

ALLOYING; ALUMINUM; ATOMS; DENSITY FUNCTIONAL THEORY; GAS ADSORPTION; MONOLAYERS; OXYGEN; SEGREGATION (METALLOGRAPHY); SILICON; TITANIUM ALLOYS; TITANIUM COMPOUNDS;

SURFACE SEGREGATION;

EID: 66349122350     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/22/225005     Document Type: Article

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