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Volumn 79, Issue 14, 2009, Pages

Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

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EID: 66249134933     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.144124     Document Type: Article
Times cited : (95)

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    • The parametrization used for these pseudopotentials is available from
    • The parametrization used for these pseudopotentials is available from http://www.physics.rutgers.edu/~dhv/uspp/.
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    • The polarization is proportional to the displacement multiplied by the Born effective charge. The Born effective charge for Z (Zr) in PZO is around 6 and Z (Ti) in PTO is around 7, which is not a substantial difference (Ref.).
    • The polarization is proportional to the displacement multiplied by the Born effective charge. The Born effective charge for Z (Zr) in PZO is around 6 and Z (Ti) in PTO is around 7, which is not a substantial difference (Ref.).
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    • The partial PDFs are a histograms of atomic separations, plotted with a Gaussian smearing having a variance of 0.02 a.u.
    • The partial PDFs are a histograms of atomic separations, plotted with a Gaussian smearing having a variance of 0.02 a.u.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.