Progress towards the merger of compound semiconductors and silicon

Solid State Technology

Volumn 52, Issue 4, 2009, Pages 16-17

  Mayberry, Mike ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOUND SEMICONDUCTORS; HIGH VOLTAGE POWER; RADIO FREQUENCIES; SILICON TECHNOLOGIES; STAND -ALONE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66249130954     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (9)

1. 0.3As Quantum Well Transistor on Silicon Substrate using Thin (≤2μm) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic Applications," IEDM Tech. Dig., 2007. pp. 625-628.
2. K. M. Lau et al., "AlInAs/GaInAs mHEMTs on Silicon Substrates Grown by MOCVD," IEDM Tech. Dig., 2008. pp. 723-726.
3. 0.25As MOSFETs with ALD High-k as Gate Dielectric," IEDM Tech. Dig., 2008. pp. 371-374.
4. 3 MOSFET," IEDM Tech. Dig., 2008. pp. 379-382.
5. 0.8As," IEDM Tech. Dig., 2008. pp. 375-378.
6. 0.3As Buried-Channel MOSFETs," IEDM Tech. Dig., 2008. pp. 367-370.
7. CC=0.5V) Logic Applications," IEDM Tech. Dig., 2008. pp. 727-730.
8. D.-H. Kim et al., "30nm E-Mode InAs PHEMTs for THz and Future Logic Applications," IEDM Tech. Dig, 2008. pp. 719-722.
9. R. Chau, et al., "Advanced Depleted-Substrate Transistors: Single-gate, Double-Gate and Tri-gate," Extended Abstracts of the International Conference on Solid-State Devices and Materials (SSDM), 2002. pp. 68-69.