High speed 2 × 2 optical switch based on carrier injection effect in GaAs/AlGaAs

Chinese Physics Letters

Volumn 26, Issue 3, 2009, Pages

  Qi, Wei ^a   Yu, Hui ^a   Jiang, Xiao Qing ^a   Yang, Jian Yi ^a   Hao, Yin Lei ^a   Zhou, Qiang ^a   Wang, Ming Hua ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM;

CARRIER INJECTION EFFECTS; EPITAXIAL MATERIALS; EXTINCTION RATIOS; GAAS/ALGAAS; HIGH SPEED; INJECTION CURRENTS; POLARIZATION SENSITIVITY; RESPONSE SPECTRA; SWITCHING SPEED; WAVELENGTH RANGES;

OPTICAL SWITCHES;

EID: 66149097796     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/3/034215     Document Type: Article

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