Far-infrared absorption and the metal-to-insulator transition in hole-doped cuprates

Physical Review Letters

Volumn 102, Issue 20, 2009, Pages

  Lupi, S ^a   Nicoletti, D ^a   Limaj, O ^a   Baldassarre, L ^a   Ortolani, M ^a   Ono, S ^b   Ando, Yoichi ^c   Calvani, P ^a  

^a UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; CUPRATES; FAR INFRARED; FAR-INFRARED ABSORPTION; HOLE-DOPED CUPRATES; K SPACE; METAL-TO-INSULATOR TRANSITIONS; MIDINFRARED; NODAL LINE; PEAK FREQUENCIES; SMALL GAPS;

ABSORPTION; COPPER COMPOUNDS; ELEMENTARY PARTICLE SOURCES; EMISSION SPECTROSCOPY; INFRARED ABSORPTION; OPTICAL CONDUCTIVITY; OXIDE SUPERCONDUCTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

METAL INSULATOR TRANSITION;

EID: 66049156170     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.206409     Document Type: Article

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