Performance trade-offs in using NVRAM write buffer for flash memory-based storage devices

IEEE Transactions on Computers

Volumn 58, Issue 6, 2009, Pages 744-758

  Kang, Sooyong ^a   Park, Sungmin ^a   Jung, Hoyoung ^a   Shim, Hyoki ^a   Cha, Jaehyuk ^a  

^a Hanyang University   (South Korea)

Author keywords

Flash memory; Flash translation layer; Nonvolatile RAM; Solid state disk; Storage device; Write buffer

Indexed keywords

BUFFER MANAGEMENT; END USERS; FILE SYSTEMS; FLASH TRANSLATION LAYER; IN-PLACE UPDATE; NAND FLASH MEMORY; NON-VOLATILE MEMORIES; NON-VOLATILE RAMS; NONVOLATILE RAM; PERFORMANCE IMPROVEMENTS; PERFORMANCE TRADE-OFF; SIMULATION RESULT; STORAGE DEVICE; STORAGE DEVICES; STORAGE SYSTEMS; WRITE BUFFER; WRITE OPERATIONS;

BUFFER STORAGE; DISKS (STRUCTURAL COMPONENTS); NAND CIRCUITS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE;

FLASH MEMORY;

EID: 66049112804     PISSN: 00189340     EISSN: None     Source Type: Journal    
DOI: 10.1109/TC.2008.224     Document Type: Article

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