High-power 25-Gb/s electroabsorption modulator integrated with a laser diode

IEEE Photonics Technology Letters

Volumn 21, Issue 10, 2009, Pages 633-635

  Takahashi, Hiroyuki ^a   Shimamura, Tomonori ^b   Sugiyama, Takashi ^b   Kubota, Munechika ^b   Nakamura, Koji ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b Oki Electric Co Ltd   (Japan)

Author keywords

100 Gb s Ethernet; Electroabsorption (EA) modulator integrated laser diode (LD); High power electroabsorption modulator integrated laser diode (EML); Ridge type laser diode (LD)

Indexed keywords

100-GB/S ETHERNET; DYNAMIC EXTINCTION RATIO; ELECTROABSORPTION (EA) MODULATOR INTEGRATED LASER DIODE (LD); HIGH-POWER; HIGH-POWER ELECTROABSORPTION MODULATOR INTEGRATED LASER DIODE (EML); INTEGRATED LASER DIODES; LASER DIODES; OUTPUT POWER; RIDGE-TYPE LASER DIODE (LD);

DIODES; ETHERNET; LADDER NETWORKS; LASERS; LIGHT ABSORPTION; MODULATION;

ELECTROABSORPTION MODULATORS;

EID: 65949116592     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2015581     Document Type: Article

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