Novel technology for capacitive pressure sensors with monocrystalline silicon membranes

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2009, Pages 697-700

  Knese, K ^a   Armbruster, S ^a   Weber, H ^a   Fischer, M ^a   Benzell, H ^a   Metz, M ^a   Seidel, H ^b  

^a ROBERT BOSCH GMBH   (Germany)

^b SAARLAND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE ABSOLUTE PRESSURE SENSOR; CAPACITIVE PRESSURE SENSORS; CMOS COMPATIBLE; COST-EFFICIENT; COUNTER ELECTRODES; LONG TERM STABILITY; MEMBRANE FORMATION; MONOCRYSTALLINE SILICON; MONOLITHIC INTEGRATION; NOVEL SURFACES; PIEZORESISTIVE TRANSDUCERS; POLY-SI; PRESSURE SENSITIVE; SENSOR PROPERTIES; SILICON MEMBRANES; SILICON SUBSTRATES; SINGLE CRYSTAL SILICON;

COMPOSITE MICROMECHANICS; MEMBRANES; MONOLITHIC INTEGRATED CIRCUITS; POLYSILICON; POROUS SILICON; PRESSURE SENSORS; PRESSURE TRANSDUCERS; SILICON WAFERS; SINGLE CRYSTALS;

SURFACE MICROMACHINING;

EID: 65949114079     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2009.4805478     Document Type: Conference Paper

References (7)

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