Structural, electronic, and vibrational properties of high-density amorphous silicon: A first-principles molecular-dynamics study

Journal of Chemical Physics

Volumn 130, Issue 19, 2009, Pages

  Morishita, Tetsuya ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; COORDINATION NUMBER; DYNAMICAL PROPERTIES; ELECTRONIC RESISTANCE; EXPERIMENTAL MEASUREMENTS; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; HIGH-DENSITY AMORPHOUS; HIGH-DENSITY LIQUID; INTERSTITIAL POSITIONS; LOW-DENSITY AMORPHOUS; STRUCTURAL DIFFERENCES; TETRAHEDRAL CONFIGURATIONS; VIBRATIONAL DENSITY OF STATE; VIBRATIONAL MODES; VIBRATIONAL PROPERTIES;

ATOMS; DIRECTIVE ANTENNAS; ELECTRONIC DENSITY OF STATES; LIQUIDS; METALLIC COMPOUNDS; SOLID STATE PHYSICS;

AMORPHOUS SILICON;

EID: 65949098409     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126093     Document Type: Article

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