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Volumn 7274, Issue , 2009, Pages

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Author keywords

22 nm node; Double dipole lithography; Double patterning; Lithography; Microlithography

Indexed keywords

22-NM NODE; CO-OPTIMIZATION; DESIGN OPTIMIZATION; DOUBLE DIPOLE LITHOGRAPHY; DOUBLE PATTERNING; IMMERSION LITHOGRAPHY; INNOVATIVE PROCESS; LOGIC CONSTRUCTS; MICROLITHOGRAPHY; NUMERICAL APERTURE; RAYLEIGH DIFFRACTION; SEMICONDUCTOR INDUSTRY; THROUGH-MASK;

EID: 65849142805     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814433     Document Type: Conference Paper
Times cited : (12)

References (10)
  • 1
    • 84868950396 scopus 로고    scopus 로고
    • Article written by Peter Clarke of Silicon Strategies for EETimes
    • B. Meyerson, "Scaling is dead at 130-nm, says IBM Technologist." http://www.eetimes.com, may 2004. Article written by Peter Clarke of Silicon Strategies for EETimes.
    • (2004) Scaling Is Dead at 130-nm, Says IBM Technologist
    • Meyerson, B.1
  • 3
    • 42149098956 scopus 로고    scopus 로고
    • Paving the way to a full chip gate level double patterning application
    • H. Haffner, J. Meiring, Z. Baum, and S. Halle, "Paving the way to a full chip gate level double patterning application," in Proc. SPIE, vol.6730, 2007. 67302C.
    • (2007) Proc. SPIE , vol.6730
    • Haffner, H.1    Meiring, J.2    Baum, Z.3    Halle, S.4
  • 4
    • 45549090899 scopus 로고    scopus 로고
    • Solving the gate ACLV and ADLV challenges with printing assist features
    • may
    • H. Haffner, J. Meiring, Z. Baum, S. Halle, and S. Mansfield, "Solving the gate ACLV and ADLV challenges with printing assist features," Microlithography World, vol.17, pp. 7-11, may 2008.
    • (2008) Microlithography World , vol.17 , pp. 7-11
    • Haffner, H.1    Meiring, J.2    Baum, Z.3    Halle, S.4    Mansfield, S.5
  • 6
    • 45449097061 scopus 로고    scopus 로고
    • Double exposure double etch for dense SRAM: A designer's dream
    • (H. J. Levinson, ed.)
    • C. Sarma, A. Gabor, S. Halle, H. Haffner, K. Herold, L. Tsou, H. Wang, and H. Zhuang, "Double exposure double etch for dense SRAM: A designer's dream," in Proc. SPIE (H. J. Levinson, ed.), vol.6924, 2008. 692429.
    • (2008) Proc. SPIE , vol.6924 , pp. 692429
    • Sarma, C.1    Gabor, A.2    Halle, S.3    Haffner, H.4    Herold, K.5    Tsou, L.6    Wang, H.7    Zhuang, H.8
  • 8
    • 65849104359 scopus 로고    scopus 로고
    • Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects
    • C. L. Henderson, ed.
    • K. Petrillo, D. Horak, S. Fan, E. McLellan, M. Colburn, A. Metz, S. Dunn, D. Hetzer, J. Cantone, K. Ueda, T. Winter, and V. Balasubramaniam, "Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects," in Proc. SPIE (C. L. Henderson, ed.), vol.7273, 2009.
    • (2009) Proc. SPIE , vol.7273
    • Petrillo, K.1    Horak, D.2    Fan, S.3    McLellan, E.4    Colburn, M.5    Metz, A.6    Dunn, S.7    Hetzer, D.8    Cantone, J.9    Ueda, K.10    Winter, T.11    Balasubramaniam, V.12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.