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Volumn 149, Issue 25-26, 2009, Pages 1008-1011

Debye temperature and melting point of ternary chalcopyrite semiconductors

Author keywords

A. Ternary chalcopyrite semiconductors; A. Tetrahedral semiconductors; D. Debye temperature; D. Melting temperature

Indexed keywords

A. TERNARY CHALCOPYRITE SEMICONDUCTORS; A. TETRAHEDRAL SEMICONDUCTORS; CALCULATED VALUES; CHALCOPYRITE SEMICONDUCTOR; D. DEBYE TEMPERATURE; D. MELTING TEMPERATURE; EXPERIMENTAL VALUES; PLASMON ENERGY; TERNARY CHALCOPYRITES;

EID: 65649142185     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.04.003     Document Type: Article
Times cited : (59)

References (26)
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    • Einstein. Ann. Phys. (Leipz) 34 (1911) 170 590; 35 (1911) 679
    • (1911) Ann. Phys. (Leipz) , vol.34 , pp. 170
    • Einstein1
  • 23
    • 84985810515 scopus 로고
    • 1391, 665; 23 (1988) 97, 351; 39 (2004) 939; 22 (1987) 99, 271
    • Neumann H. Cryst. Res. Tech. 18 (1983) 1299 1391, 665; 23 (1988) 97, 351; 39 (2004) 939; 22 (1987) 99, 271
    • (1983) Cryst. Res. Tech. , vol.18 , pp. 1299
    • Neumann, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.