Surface energy effects on the Self-assembly of epitaxial quantum dots

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7224, Issue , 2009, Pages

  Friedman, Lawrence H ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Epitaxial growth; GeSi; InGaAs; Lms; Quantum dots; Roughening; Self assembly; SOS model; Step edges; Surface energy

Indexed keywords

GESI; INGAAS; LMS; QUANTUM DOTS; ROUGHENING; SOS MODEL; STEP-EDGES; SURFACE ENERGY;

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; FREE ENERGY; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; NANOCLUSTERS; PHASE DIAGRAMS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM; STATISTICAL MECHANICS; SURFACE CHEMISTRY; SURFACE TENSION; THREE DIMENSIONAL; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65649094843     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809796     Document Type: Conference Paper

References (46)

1. Li, S.-S., Xia, J.-B., Yuan, Z. L., Xu, Z. Y., Ge, W., Wang, X. R., Wang, Y., Wang, J., and Chang, L. L., "Effectivemass theory for InAs/GaAs strained coupled quantum dots," Phys. Rev. B 54, 11575-11581 (Oct 1996).
2. Li, S.-S. and Xia, J.-B., "Intraband optical absorption in semiconductor coupled quantum dots," Phys. Rev. B 55, 15434-15437 (Jun 1997).
3. Bimberg, D., Grundmann, M., and Ledentsov, N. N., [Quantum Dot Heterostructures], John Wiley & Sons (1999).
4. Pchelyakov, O. P., Bolkhovityanov, Y. B., Dvurechenski, A. V., Sokolov, L. V., Nikiforov, A. I., Yakimov, A. I., and Voigtländer, B., "Silicon Germanium nanostructures with quantum dots: Formation mechanisms and electrical properties," Semiconductors 34(11), 122947 (2000). [doi:10.1134/1.1325416] .
5. Grundmann, M., "The present status of quantum dot lasers," Physica E 5, 167 (2000). [doi:10.1016/S1386-9477(99)00041-7].
6. Petroff, P. M., Lorke, A., and Imamoglu, A., "Epitaxially self-assembled quantum dots," Physics Today, 46-52 (May 2001). [doi:10.1063/1.1381102].
7. Liu, H.-Y., Xu, B., Wei, Y.-Q., Ding, D., Qian, J.-J., Han, Q., Liang, J.-B., and Wang, Z.-G., "High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm," Applied Physics Letters 79(18), 2868-70 (2001). [doi:10.1063/1.1415416].
8. Bimberg, D., Ledentsov, N., and Lott, J., "Quantum-dot vertical-cavity surface-emitting laser," MRS Bulletin 27(7), 531-7 (2002).
9. Friesen, M., Rugheimer, P., Savage, D. E., Lagally, M. G., van der Weide, D. W., Joynt, R., and Eriksson, M. A., "Practical design and simulation of silicon-based quantum-dot qubits," Physical Review B 67(12), 121301 (R) (2003). [doi:10.1103/Phys Rev B. 67.121301].
10. Cheng, Y.-C., Yang, S., Yang, J.-N., Chang, L.-B., and Hsieh, L.-Z., "Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices," Optical Engineering 42(1), 11923 (2003). [doi:10.1117/1.1525277].
11. Sakaki, H., "Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy," Journal of Crystal Growth 251, 9-16 (2003). [doi:10.1016/S0022-0248(03)00831-5].
12. Spencer, B. J., Voorhees, P. W., and Davis, S. H., "Morphological instability in epitaxially strained dislocation-free films," Physical Review Letters 67(26), 3696-3699 (1991). [doi:10.1103/Phys Rev Lett.67.3696].
13. Brunner, K., "Si/ge nanostructures," Reports on Progress in Physics 65(1), 27-72 (2002). [doi:10.1088/0034-4885/65/1/202].
14. Freund, L. B. and Suresh, S., [Thin Film Materials: Stress, Defect Formation and Surface Evolution], ch. 8, Cambridge University Press (2003).
15. Tersoff, J. and LeGoues, F. K., "Competing relaxation mechanisms in strained layers," Physical Review Letters 72, 3570-3573 (May 1994). [doi:10.1103/PhysRevLett.72.3570].
16. Asaro, R. and Tiller, W., "Interface morphology development during stress corrosion cracking: Part i. via surface diffusion," Metallurgical and Materials Transactions B 3(7), 1789-1796 (1972).
17. Grinfeld, M. A., "Instability of the separation boundary between a non-hydrostatically stressed elastic body and a melt.," Soviet Physics Doklady 31, 831-4 (1986).
18. Srolovitz, D. J., "On the stability of surfaces of stressed solids," Acta Metallurgica 37(2), 621-625 (1989). [doi:10.1016/0001- 6160(89)90246-0].
19. Shenoy, V. B. and Freund, L. B., "A continuum description of the energetics and evolution of stepped surfaces in strained nanostructures," Journal of the Mechanics and Physics of Solids 50(9), 1817-1841 (2002).
20. Tromp, R. M., Ross, F. M., and Reuter, M. C., "Instability-driven sige island growth," Phys. Rev. Lett. 84, 4641-4644 (May 2000).
21. Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., and Greene, J. E., "Pathway for the strain-driven twodimensional to three-dimensional transition during growth of ge on si(001)," Phys. Rev. Lett. 85, 3672-3675 (Oct 2000).
22. Tersoff, J., Spencer, B. J., Rastelli, A., and von Känel, H., "Barrierless formation and faceting of SiGe islands on Si(001)," Phys. Rev. Lett. 89, 196104 (Oct 2002).
23. Shenoy, V. B., Ciobanu, C. V., and Freund, L. B., "Strain induced stabilization of stepped Si and Ge surfaces near (001)," Applied Physics Letters 81(2), 364-366 (2002).
24. Friedman, L. H., "Anisotropy and morphology of strained III-V heteroepitaxial films," Physical Review B (Condensed Matter and Materials Physics) 78(19), 193302 (2008).
25. Friedman, L. H., "Stochastic continuum modeling self-assembled epitaxial quantum dot formation," Nanostructured Thin Films 7041(1), 704103, SPIE (2008).
26. Zhang, Y., Bower, A., and Liu, P., "Morphological evolution driven by strain induced surface diffusion," Thin solid films 424, 9-14 (2003). [doi:10.1016/S0040-6090(02)00897-0].
27. Friedman, L., "Predicting and understanding order of heteroepitaxial quantum dots," Journal of Electronic Materials 36(12), 1546-1554 (2007).
28. Lee, H., Yang, W., Sercel, P., and Norman, A., "The shape of self-assembled InAs islands grown by molecular beam epitaxy," Journal of Electronic Materials 28(5), 481-485 (1999).
29. Jeong, H.-C. and Williams, E. D., "Steps on surfaces: experiment and theory," Surface Science Reports 34(6-8), 171-294 (1999).
30. Cross, M. C. and Hohenberg, P. C., "Pattern formation outside equilibrium," Reviews of Modern Physics 65(3), 851-1112 (1993). [doi:10.1103/RevModPhys.65.851].
31. Golovin, A. A., Davis, S. H., and Voorhees, P. W., "Self- organization of quantum dots in epitaxially strained solid films," Physical Review E 68, 056203 (2003). [doi:10.1103/PhysRevE.68.056203].
32. Golovin, A. A., Levine, M. S., Savina, T. V., and Davis, S. H., "Faceting instability in the presence of wetting interactions: A mechanism for the formation of quantum dots," Physical Review B 70, 235342 (2004). [doi:10.1103/PhysRevB.70.235342].
33. Obayashi, Y. and Shintani, K., "Directional dependence of surface morphological stability of heteroepitaxial layers," Journal of Applied Physics 84(6), 3141 (1998). [doi:10.1063/1.368468].
34. Ozkan, C. S., Nix, W. D., and Gao, H. J., "Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode," JOURNAL OF MATERIALS RESEARCH 14, 3247-3256 (Aug 1999). [doi:10.1557/JMR.1999.043].
35. Ramasubramaniam, A. and Shenoy, V. B., "Three-dimensional simulations of self-assembly of hut-shaped Si-Ge quantum dots," Journal of Applied Physics 95, 7813-7824 (Jun 2004).
36. Chokshi, N. S. and Millunchick, J. M., "Cooperative nucleation leading to ripple formation in InGaAs/GaAs films," Applied Physics Letters 76(17), 2382-2384 (2000).
37. Liang, B. L., Wang, Z. M., Mazur, Y. I., Strelchuck, V. V., Holmes, K., Lee, J. H., and Salamo, G. J., "InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties," Nanotechnology 17(11), 2736-2740 (2006). doi:10.1088/0957-4484/17/11/004].
38. Schmidbauer, M., Seydmohamadi, S., Grigoriev, D., Wang, Z. M., Mazur, Y. I., Schafer, P., Hanke, M., Kohler, R., and Salamo, G. J., "Controlling planar and vertical ordering in three-dimensional (In, Ga)As quantum dot lattices by GaAs surface orientation," Phys. Rev. Lett. 96, 066108 (Feb 2006).
39. Zandvliet, H. J. W., "Energetics of Si(001)," Rev. Mod. Phys. 72, 593-602 (Apr 2000).
40. Zandvliet, H. J. W., "Determination of Ge(001) step free energies," Phys. Rev. B 61, 9972-9974 (Apr 2000).
41. Prasad, A. and Weichman, P. B., "Layering transitions, disordered flat phases, reconstruction, and roughening," Phys. Rev. B 57, 4900-4938 (Feb 1998).
42. Swendsen, R. H., "Monte carlo studies of the interface roughening transition," Phys. Rev. B 15, 5421-5431 (Jun 1977).
43. Beck, M. J., van de Walle, A., and Asta, M., "Surface energetics and structure of the Ge wetting layer on Si(100)," Physical Review B 70, 205337 (Nov 2004). [doi:10.1103/PhysRevB.70.205337].
44. Newman, M. E. J. and Barkema, G. T., [Monte Carlo Methods in Statistical Physics], Oxford University Press (1999).
45. Huse, D. A., "Renormalization-group analysis of layering transitions in solid films," Phys. Rev. B 30, 1371-1376 (Aug 1984).
46. Gutheim, F., Müller-Krumbhaar, H., Brener, E., and Kaganer, V., "Thermal roughening of a solid-on-solid model with elastic interaction," Phys. Rev. B 67, 195404 (May 2003).