Voltage-gated metal-enhanced fluorescence II: Effects of fluorophore concentration on the magnitude of the gated-current

Journal of Fluorescence

Volumn 19, Issue 2, 2009, Pages 369-374

  Dragan, Anatoliy I ^a   Zhang, Yongxia ^a   Geddes, Chris D ^a  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

Metal Enhanced fluorescence; Mirror dipole; Near Field effects; Plasmon controlled fluorescence; Radiative decay engineering; Surface plasmons; Surface Enhanced fluorescence; Voltage gated fluorescence

Indexed keywords

METAL-ENHANCED FLUORESCENCE; NEAR-FIELD EFFECTS; RADIATIVE DECAY ENGINEERING; SURFACE PLASMONS; SURFACE-ENHANCED FLUORESCENCE; VOLTAGE-GATED FLUORESCENCE;

ELECTRIC POTENTIAL; METALS; MIRRORS; OPTICAL DATA STORAGE; PLASMONS; SILVER;

FLUOROPHORES;

METAL;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTROCHEMICAL ANALYSIS; FLUORESCENCE; SURFACE PROPERTY;

ELECTRICITY; ELECTROCHEMICAL TECHNIQUES; FLUORESCENCE; METALS; SURFACE PROPERTIES;

EID: 65549104319     PISSN: 10530509     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10895-009-0460-4     Document Type: Article

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