Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4086-4089

  Lee, Ju Young ^a   Jang, Bo Ra ^a   Lee, Jong Hoon ^a   Kim, Hong Seung ^a   Cho, Hyung Koun ^b   Moon, Jin Young ^c   Lee, Ho Seong ^c   Lee, Won Jae ^d   Baek, Jin Wook ^d  

^a Korea Maritime University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kyungpook National University   (South Korea)

^d Dong Eui University   (South Korea)

Author keywords

Heterostructure; In doped ZnO; PLD

Indexed keywords

DEEP-LEVEL EMISSIONS; HALL-EFFECT MEASUREMENTS; HETEROSTRUCTURE; IN-DOPED ZNO; MOLE FRACTIONS; OPTICAL AND ELECTRICAL PROPERTIES; PLD; PREFERRED ORIENTATIONS; RED SHIFTS; SI (1 1 1); UV EMISSIONS; X- RAY DIFFRACTIONS; ZNO;

CRYSTAL ATOMIC STRUCTURE; ELECTRIC PROPERTIES; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLIC FILMS; OPTICAL MICROSCOPY; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 65449187821     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.172     Document Type: Article

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