Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L2,3 edge

Journal of Physics Condensed Matter

Volumn 21, Issue 9, 2009, Pages

  Siller L ^a   Krishnamurthy, S ^a   Kjeldgaard, L ^b   Horrocks, B R ^a   Chao, Y ^a   Houlton, A ^a   Chakraborty, A K ^c   Hunt, M R C ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b LUND UNIVERSITY   (Sweden)

^c DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND NARROWING; ELEMENT SPECIFICS; EXCITON FORMATIONS; LOWER LIMITS; NARROW SIZE DISTRIBUTIONS; RESONANT INELASTIC X-RAY SCATTERINGS; SHARP FEATURES; SI NANOCRYSTALS; SPATIAL CONFINEMENTS; X-RAY ABSORPTION SPECTROSCOPIES; X-RAY ABSORPTIONS; X-RAY EMISSIONS; X-RAY EXCITED OPTICAL LUMINESCENCES;

ABSORPTION; ELECTRONIC DENSITY OF STATES; EMISSION SPECTROSCOPY; EXCITONS; LUMINESCENCE; NANOCRYSTALS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; X RAY ABSORPTION; X RAY SCATTERING; X RAY SPECTROSCOPY; X RAYS;

ABSORPTION SPECTROSCOPY;

EID: 65449172385     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/9/095005     Document Type: Article

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