Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

Technical Physics

Volumn 54, Issue 4, 2009, Pages 600-602

  Remnev, G E ^a   Ivanov, Yu F ^b   Naiden, E P ^c   Saltymakov, M S ^a   Stepanov, Andrey V ^a   Shtan'Ko, V F ^a  

^a NATIONAL RESEARCH TOMSK POLYTECHNIC UNIVERSITY   (Russian Federation)

^b INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

^c TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65449167678     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063784209040264     Document Type: Article

References (9)

1. A. A. Lebedev V. V. Zelenin P. L. Abramov 2007 Fiz. Tekh. Poluprovodn. (St. Petersburg) 41 273 [Semiconductors 41, 263 (2007)]
2. P. A. Ivanov M. E. Levinshtein 2005 Fiz. Tekh. Poluprovodn. (St. Petersburg) 39 897 [Semiconductors 39, 861 (2005)]
3. R. I. Batalov, R. M. Bayazitov, and R. M. Nurutdinov, Izv. Vyssh. Uchebn. Zaved., Ser. Materialy Eelektronnoi Tekhniki, No. 1, 28 (2006).
4. N. S. Li X. H. Wu L. S. Liao X. M. Bao 1998 Nucl. Instrum. Methods Phys. Res. B 142 308
5. L. T. Canham K. G. Barraclough D. J. Robbins 1987 Appl. Phys. Lett. 51 1509
6. R. T. Hodson J. E. E. Baglin R. Pal 1980 Appl. Phys. Lett. 37 187
7. F. F. Komarov A. P. Novikov 1989 Itogi Nauki Tekh., Ser.: Fiz. Osnovy Lazer. Puchk. Tekhnol. 5 113
8. Yu. F. Ivanov M. S. Opekunov A. G. Muzyrevich G. E. Remnev 1995 Pis'ma Zh. Tekh. Fiz. 21 24 60 [Tech. Phys. Lett. 21, 1021 (1995)]
9. V. S. Lopatin, G. E. Remnev, E. G. Furman, et al., Prib. Tekh. Eksp., No. 4, 70 (2004).