Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode

Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

  Wang, Jiqing ^a   Liu, Yan ^a   Mao, Huibing ^a   Zhao, Qiang ^a   Yu, Jianguo ^a   Zhang, Yong ^a   Zhu, Ziqiang ^a   Chu, Junhao ^a  

^a East China Normal University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONCENTRATIONS; CHARGE POLARIZATIONS; CURRENT INTENSITIES; ELECTRON SPIN POLARIZATIONS; HETEROSTRUCTURES; MN-DOPING; RESONANT TUNNELING DIODES; RESONANT TUNNELING STRUCTURES; ROOM TEMPERATURES; SPIN TUNNELING;

ELECTRIC CHARGE; ELECTRON TUBE DIODES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HETEROJUNCTIONS; MANGANESE; MANGANESE COMPOUNDS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SPIN POLARIZATION; TUNNEL DIODES;

SPIN DYNAMICS;

EID: 65449150958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126043     Document Type: Article

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