Stress field analysis to understand the breakdown characteristics of stacked high- k dielectrics

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Lee, Byoung Hun ^a   Kang, Changyong ^b   Choi, Rino ^c   Lee, Hi Deok ^d   Bersuker, Gennadi ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SEMATECH   (United States)

^c Inha University   (South Korea)

^d Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; HIGH - K DIELECTRICS; HIGH ELECTRIC FIELDS; OVERSTRESS; RELIABILITY CHARACTERISTICS; SINGLE LAYERS; STACKED DIELECTRICS; STRESS FIELD ANALYSIS; TEST TIME; TIME-ZERO DIELECTRIC BREAKDOWNS;

ELECTRIC FIELDS; RELIABILITY;

DIELECTRIC MATERIALS;

EID: 65449127413     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3122924     Document Type: Article

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